View MBNP01Q40Q8_8398261.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

cystech electronics corp. spec. no. : c068q8 issued date : 2016.05.27 revised date : 2016.05.30 page no. : 1/11 MBNP01Q40Q8 cystek product specification complex transistors MBNP01Q40Q8 features ? two pnp and two nmos chips are assembled in a standard sop-8 package ? mounting area could be greatly reduced. ? pb-free lead plating and halogen-free package equivalent circuit outline MBNP01Q40Q8 g gate s source d drain b : base c : collector e : emitter sop-8 ordering information device package shipping MBNP01Q40Q8-0-t3-g sop-8 (pb-free lead plating & halogen-free package) 2500 pcs / tape & reel environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pcs / tape & reel,13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c068q8 issued date : 2016.05.27 revised date : 2016.05.30 page no. : 2/11 MBNP01Q40Q8 cystek product specification absolute maximum ratings (t c =25 c, unless otherwise noted) nmos parameter symbol limits unit drain-source voltage v ds 400 gate-source voltage v gs 12 v continuous drain current @ t a =25 c, v gs =10v (note 2) 0.36 continuous drain current @ t a =70 c, v gs =10v (note 2) i d 0.29 pulsed drain current (note 1) i dm 5.2 a maximum power dissipation @ t a =25 (note 2) 1.6 w linear derating factor p d 0.01 w/ c operating junction and storage temperature range tj, tstg -55~+150 c pnp parameter symbol limits unit collector-base voltage v cbo -400 collector-emitter voltage v ceo -400 emitter-base voltage v ebo -5 v collector current i c -300 ma total power dissipation 1.5 w linear derating factor p d 0.01 w/ c operating junction and storage temperature range tj, tstg -55~+150 c thermal data va l u e parameter symbol nmos pnp unit thermal resistance, junction-to-case, max r th,j-c 6 thermal resistance, junction-to-ambient, max r th,j-a 70 (note 2) 83 (note 2) c/w note : 1.pulse width limited by maximum junction temperature. 2.surface mounted on 1 in2 copper pad of fr-4 board, pulse width 10s.
cystech electronics corp. spec. no. : c068q8 issued date : 2016.05.27 revised date : 2016.05.30 page no. : 3/11 MBNP01Q40Q8 cystek product specification nmos electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 400 - - v gs =0v, i d =250 a v gs(th) 1.0 - 2.5 v v ds =v gs , i d =250 a - - 100 na v gs =3v, v ds =0v i gss - - 10 a v gs =12v, v ds =0v - - 100 na v ds =320v, v gs =0v i dss - - 10 a v ds =320v, v gs =0v, tj=125 c - 4.2 5.5 v gs =10v, i d =100ma *r ds(on) - 4.2 5.5 v gs =4.5v, i d =100ma *g fs - 300 - ms v ds =10v, i d =30ma dynamic ciss - 173 - coss - 20 - crss - 19 - pf v ds =30v, v gs =0v, f=1mhz *t d(on) - 3.4 - *t r - 5.8 - *t d(off) - 10.6 - *t f - 23.4 - ns v ds =200v, i d =1a, v gs =10v, r g =6 *qg - 7.5 - *qgs - 0.7 - *qgd - 3.2 - nc v ds =320v, i d =100ma, vgs=10v body diode *i s - - 0.36 *i sm - - 5.2 a *v sd - 0.72 1 v v gs =0v, i s =100ma *trr - 96 - ns *qrr - 67 - nc i f =0.5a, v gs =0v, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c068q8 issued date : 2016.05.27 revised date : 2016.05.30 page no. : 4/11 MBNP01Q40Q8 cystek product specification pnp electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions bv cbo -400 - - v i c =-50 a bv ceo -400 - - v i c =-1ma bv ebo -5 - - v i e =-50 a i cbo - - -100 na v cb =-400v i ces - - -100 na v ce =-300v, r eb =0 i ebo - - -100 na v eb =-5v *v ce(sat) - -0.17 -0.35 v i c =-20ma, i b =-1ma *v ce(sat) - -0.18 -0.35 v i c =-50ma, i b =-5ma *v ce(sat) - -0.18 -0.35 v i c =-100ma, i b =-20ma *v be(sat) - -0.73 -1 v i c =-20ma, i b =-2ma *h fe 80 - 300 - v ce =-10v, i c =-10ma *h fe 30 - - - v ce =-10v, i c =-100ma f t - 100 - mhz v ce =-10v, i c =-10ma, f=5mhz cob - 4.6 - pf v cb =-10v, i e =0a, f=1mhz *pulse test: pulse width 380 s, duty cycle 2%
cystech electronics corp. spec. no. : c068q8 issued date : 2016.05.27 revised date : 2016.05.30 page no. : 5/11 MBNP01Q40Q8 cystek product specification typical characteristics : nmos typical output characteristics 0.0 0.4 0.8 1.2 1.6 2.0 0 5 10 15 20 25 30 35 40 45 50 v ds , drain-source voltage(v) i d , drain current(a) 10v, 9v, 8v,7v,6v,5v,4v,3.5v v gs =3v v gs =2.5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 0.01 0.1 1 10 i d , drain current(a) r ds(on) , static drain-source on-state resistance() v gs =4.5v v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 2 4 6 8 10 024681 0 drain-source on-state resistance vs junction tempearture 0 0.5 1 1.5 2 2.5 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance() v gs =10v, i d =100ma i d =100ma r ds( on) @tj=25c : 4.2 typ
cystech electronics corp. spec. no. : c068q8 issued date : 2016.05.27 revised date : 2016.05.30 page no. : 6/11 MBNP01Q40Q8 cystek product specification typical characteristics(cont.) : nmos capacitance vs drain-to-source voltage 1 10 100 1000 0 102030405060708090100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss normalizedthreshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 0.001 0.01 0.1 i d , drain current(a) g fs , forward transfer admittance(s) v ds =10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0246 total gate charge---qg(nc) v gs , gate-source voltage(v) 8 i d =100ma v ds =320v v ds =80v v ds =200v maximum drain current vs junction temperature 0 0.1 0.2 0.3 0.4 0.5 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) v gs =10v, r ja =70c/w typical transfer characteristics 0 0.3 0.6 0.9 1.2 1.5 012345 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v
cystech electronics corp. spec. no. : c068q8 issued date : 2016.05.27 revised date : 2016.05.30 page no. : 7/11 MBNP01Q40Q8 cystek product specification typical characteristics : pnp emitter grounded output characteristics 0 0.02 0.04 0.06 0.08 0.1 0.12 0123456 -vce, collector-to-emitter voltage(v) -ic, collector current(a) 1ma 1.5ma 2.5ma 5ma -ib=500ua emitter grounded output characteristics 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0123456 -vce, collector-to-emitter voltage(v) -ic, collector current(a) 4ma 6ma 10ma 20ma -ib=2ma current gain vs collector current 1 10 100 1000 0.1 1 10 100 1000 -ic, collector current(ma) hfe, current gain tj=125c 75c 25c 0c -40c -vce=5v current gain vs collector current 10 100 1000 0.1 1 10 100 1000 -ic, collector current(ma) hfe, current gain tj=125c 75c 25c 0c -40c - vce=10v saturation voltage vs collector current 10 100 1000 0.1 1 10 100 1000 -ic, collector current(ma) -vcesat, saturation voltage(mv) vcesat@ic=10ib -40 c 0 c 25 c 75 c 125 c saturation voltage vs collector current 10 100 1000 0.1 1 10 100 1000 -ic, collector current(ma) -vcesat, saturation voltage(mv) -40c 0c 25c 75c 125c vcesat@ic=20ib
cystech electronics corp. spec. no. : c068q8 issued date : 2016.05.27 revised date : 2016.05.30 page no. : 8/11 MBNP01Q40Q8 cystek product specification typical characteristics(cont.) : fet 2 saturation voltage vs collector current 100 1000 10000 0.1 1 10 100 1000 -ic, collector current(ma) -vbesat,saturation voltage(mv) vbesat@ic=10ib -40c 0c 25c 75c 125c on voltage vs collector current 100 1000 10000 0.1 1 10 100 1000 -ic, collector current(ma) -vbeon, on voltage(mv) vbeon@vce=-10v -40 c 0 c 25 c 75 c 125 c capacitance vs reverse-biased voltage 1 10 100 0.1 1 10 100 -vr, reverse-biased voltage(v) capacitance(pf) cib cob recommended soldering footprint
cystech electronics corp. spec. no. : c068q8 issued date : 2016.05.27 revised date : 2016.05.30 page no. : 9/11 MBNP01Q40Q8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c068q8 issued date : 2016.05.27 revised date : 2016.05.30 page no. : 10/11 MBNP01Q40Q8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. issued date : 2016.05.27 revised date : 2016.05.30 page no. : 11/11 spec. no. : c068q8 MBNP01Q40Q8 cystek product specification sop-8 dimension *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1909 0.2007 4.85 5.10 i 0.0019 0.0078 0.05 0.20 b 0.1515 0.1555 3.85 3.95 j 0.0118 0.0275 0.30 0.70 c 0.2283 0.2441 5.80 6.20 k 0.0074 0.0098 0.19 0.25 d 0.0480 0.0519 1.22 1.32 l 0.0145 0.0204 0.37 0.52 e 0.0145 0.0185 0.37 0.47 m 0.0118 0.0197 0.30 0.50 f 0.1472 0.1527 3.74 3.88 n 0.0031 0.0051 0.08 0.13 g 0.0570 0.0649 1.45 1.65 o 0.0000 0.0059 0.00 0.15 h 0.1889 0.2007 4.80 5.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . marking: 8-lead sop-8 plastic package cystek packa g e code: q8 top view a b front view f c d e g i part a h j k o m l n right side view part a date code mbnp01 q40 device name

▲Up To Search▲

Price & Availability of MBNP01Q40Q8

	To Download MBNP01Q40Q8 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .